Parameter FET FET many, including DC parameters, communication parameters and limit parameters Jiangsu IR optocoupler, but generally focus on the following key parameters when using: (1), I DSS - saturated drain-source current. Refers to the junction or the depletion mode insulated gate field effect transistor, the gate voltage U GS = 0 when a drain-source current. (2), UP - pinch-off voltage. Refers to the junction or depletion mode insulated gate field effect transistor in the IR, the gate voltage between the drain-source off just when. (3), UT - turn-on voltage. Refers to the insulated gate enhancement mode field effect tube Jiangsu IR element, the gate voltage between the drain-source of just turned. (4), gM - transconductance. Is a gate-source voltage U GS - on the ability to control the drain current ID, i.e., the ratio of the drain current ID and the amount of change in the gate-source voltage UGS change amount. gM is an important parameter to measure the FET amplification capabilities. (5), BUDS - drain-source breakdown voltage. Refers to the gate-source voltage UGS constant FET work can withstand the maximum drain-source voltage. This is an extreme argument, applied to the FET operating voltage must be less than BUDS. (6), PDSM - maximum power dissipation. Is an extreme argument refers to the FET performance is not deteriorated maximum allowable drain-source power dissipation. When used, the FET should be less than the actual power consumption PDSM and leave some margin. (7), IDSM - maximum drain-source current. Is a limit parameter refers to the FET is operating normally, the source-drain current through the allowed maximum. FET operating current should not exceed IDSM. LM258P First, the gate - source voltage to 0V when considering (VGS = 0). In this state, the drain - source voltage VDS increases from 0V, and the drain current ID increases almost in proportion to VDS, this region is called a non-saturation region. VDS reaches a certain value or more changes in the drain current ID becomes smaller, almost constant value. At this point the ID called saturation drain current (sometimes also called the leakage current is represented by the corresponding IDSS and VDS this IDSS called pinch-off voltage VP, this area is called the saturated zone followed by the drain. - Source voltage is applied between a certain VDS (e.g. 0.8V), VGS value starts to increase in the negative direction from 0 Jiangsu IR agent ID from the IDSS value began to slowly decrease to a value of VGS ID = 0 at this time is called the gate VGS - Source blocking voltage between poles or cut-off voltage, with VGS (off) .n channel JFET shows the situation is VGS (off) values ??with a negative sign, measuring actual JFET corresponding ID = 0 of VGS because it is difficult, in amplifier When small signal JFET, will reach ID = VGS definition 0.1-10μA for VGS (off) the situation more. STP65NF06 Jiangsu IR components, Jiangsu IR, 耀坤 technology provided by Nanjing 耀坤 Ltd. Nanjing 耀坤 Technology Ltd. (www.njykkj888.com) strong, credible, in Nanjing, Jiangsu diode industry has accumulated a large number of loyal customers. The company better work attitude and constantly improve the innovation of technology and ideas will lead you hand into the 耀坤brilliant, for a better future!