IC and lead away from the pulse voltage source should be set as far away from the location of pulsed high voltage integrated circuits, high-frequency devices. Integrated circuits and associated connecting lead wires as short as possible, in the inevitable long-term to join the overvoltage protection circuit, especially automotive tape recorders installed should pay more attention. When the CMOS circuit wiring, external components should be connected as close to the pin, and strive to lead the Czech Republic is short, avoid using long leads in parallel, or easy to introduce a large distributed capacitance and inductance sanyo motors, easy to form a LC oscillator. The solution is to train people in the input side 10KΩ resistor. When CMOS circuits for high-speed, pay attention to the circuit structure and PCB design. Output lead is too long, prone to "ring" phenomenon. Cause waveform distortion. Due to belong to the high-speed ECL digital integrated circuits, it is necessary to consider the "crosstalk" and other special problems exist in the signal line "reflection" and between adjacent signal lines, if necessary using transmission lines (such as coaxial cable), and to ensure that the transmission line impedance matching. In addition, the need to adopt some shielding, isolation measures. When the operating frequency exceeds 200Mz when sanyo, should use multi-layer circuit board to reduce ground impedance. Many Parameter MC33035DW2G FET FET, including DC parameters, communication parameters and limit parameters, but generally focus on the following key parameters when using: (1), I DSS - saturated drain-source current. Refers to the junction or the depletion mode insulated gate field effect transistor, the gate voltage U GS = 0 when a drain-source current. (2), UP - pinch-off voltage. Refers to the junction or depletion mode insulated gate field effect transistor in sanyo accessories, drain-source voltage of the gate just off the time. (3), UT - turn-on voltage. Refers to the insulated gate enhancement mode field effect tube, so that the gate voltage between the drain-source just turned on the. (4), gM - transconductance. Is a gate-source voltage U GS - on the ability to control the drain current ID, i.e., the ratio of the drain current ID and the amount of change in the gate-source voltage UGS change amount. gM is an important parameter to measure the FET amplification capabilities. (5), BUDS - drain-source breakdown voltage. Refers to the gate-source voltage UGS constant sanyo electronics, FET work can withstand the maximum drain-source voltage. This is an extreme argument, applied to the FET operating voltage must be less than BUDS. (6), PDSM - maximum power dissipation. Is an extreme argument refers to the FET performance is not deteriorated maximum allowable drain-source power dissipation. When used, the FET should be less than the actual power consumption PDSM and leave some margin. (7), IDSM - maximum drain-source current. Is a limit parameter refers to the FET is operating normally, the source-drain current through the allowed maximum. FET operating current should not exceed IDSM. LM258P sanyo specifications, Nanjing sanyo, 耀坤 technology provided by Nanjing 耀坤 Technology Limited. Nanjing 耀坤 Ltd. (www.njykkj.com) strong, credible, in Nanjing, Jiangsu diode industry has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead Yaokun into the brilliant technology and you work for a better future!